document number: 88816 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-nov-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 surface mount ultrafast plastic rectifier murs340, murs360 vishay general semiconductor new product features ? glass passivated chip junction ? ideal for automated placement ? ultrafast reverse recovery time ? low switching losses, high efficiency ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. mechanical data case: do-214ab (smc) molding compound meets ul 94 v-0 flammabi lity rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs compli ant, aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 cla ss 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 3.0 a v rrm 400 v, 600 v i fsm 125 a t rr 50 ns v f 1.05 v t j max. 175 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol murs340 murs360 unit device marking code mg mj maximum repetitive pe ak reverse voltage v rrm 400 600 v working peak reverse voltage v rwm 400 600 v maximum dc blocking voltage v dc 400 600 v maximum average forward rectified current at: (fig. 1) t l = 130 c i f(av) 3.0 a t l = 115 c 4.0 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 125 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88816 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-nov-09 murs340, murs360 vishay general semiconductor new product note (1) pulse test: t p = 300 s, duty cycle 2 % note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitive pe ak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions s ymbol murs340 murs360 unit maximum instantaneous forward voltage i f = 3.0 a t j = 25 c v f (1) 1.25 v i f = 4.0 a 1.28 i f = 3.0 a t j = 150 c 1.05 maximum instantaneous reverse current at rated dc blocking voltage t j = 25 c i r (1) 10 a t j = 150 c 250 maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 50 ns maximum reverse recovery time i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 10 % i rm t rr 75 ns maximum forward recovery time i f = 1.0 a, di/dt = 100 a/s, recovery to 1.0 v t fr 25 ns thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol murs340 murs360 unit typical thermal resistance junction to ambient r jl 11 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode murs340-e3/57t 0.211 57t 850 7" diam eter plastic tape and reel murs340-e3/9at 0.211 9at 3500 13" diam eter plastic tape and reel murs340he3/57t (1) 0.211 57t 850 7" diameter plastic tape and reel murs340he3/9at (1) 0.211 9at 3500 13" diameter plastic tape and reel 0 2 3 4 5 25 50 75 100 125 150 175 average forward current (a) t l - lead temperature (c) 1 25 0 50 75 100 125 150 1 100 10 average forward current (a) number of cycle s at 60 hz
document number: 88816 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-nov-09 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 murs340, murs360 vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance fig. 6 - typical reverse switching characteristics package outline dimensions in inches (millimeters) in s tantaneou s forward voltage (v) 0.1 10 1 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 in s tantaneou s forward current (a) t j = 150 c t j = 125 c t j = 25 c t j = 100 c 60 40 20 0 100 80 in s tantaneou s rever s e current (a) percent of rated peak rever s e voltage (%) 0.01 0.1 10 1 100 1000 t j = 150 c t j = 125 c t j = 25 c t j = 100 c rever s e voltage (v) junction capacitance (pf) 0.1 1 10 1 10 100 100 1000 25 50 0 20 40 60 80 75 100 125 100 120 1 a, 50 a/ s , 30 v junction temperature (c) s tored charge/rever s e recovery time (nc/n s ) t rr q rr cathode band do-214ab ( s mc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pad layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref.
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